a-Si:H薄膜固相晶化法制备大晶粒多晶硅薄膜

Large grain-sized polycrystalline silicon film obtained by SPC of a-Si: H film deposited by PCVD

用等离子体化学气相沉积（PCVD）法制备：a－Si：N薄膜材料（衬底温度20O℃～350℃），用固相晶化法（SPC）获得多晶硅薄膜（退火温度500℃～650℃）,用X射线衍射法测得平均晶粒尺寸依赖于退火温度和沉积条件，随着沉积温度的降低需要较高的退火温度,用SEM观测形貌测得平均晶粒大小为1,0～1。

Large grain-sized polycrystalline silicon film was obtained at an annealing temperature between 500℃ to 650℃ by SPC of a-Si: H film deposited by PCVD at a substrate temperature between 200℃ to 350℃, Upon X-ray diffraction (XRD), its average grain size has been found to be dependent on the contrast between annealing temperatures and the deposition conditions, that is, the lower the deposition temperatures, the biger the annealing temperatures, Under scanning electron microscopy (SEM), the average grain size has been found to be at a range between 1, 0 to 1, 5 μm,