摘要
研制了一台高速率溅射的ＥＣＲ等离子体沉积装置．采用微波真空波导及反常模式或输入技术，利用腔内双靶构成的电场镜，使高能γ电子在电场镜中振荡，从而获得高密度的等离子体．并且，导电膜能连续高速沉积，在２．７×１０－２Ｐａ的低气压下，铜膜的沉积速率可达１２０ｎｍ／ｍｉｎ．
A high rate sputtering type ECR microwave plasma apparatus has been studied. The apparatus is characterized by utilizing a technique vacuum waveguide and an extraordinary wave mode coupling using an electric mirror by mean of the two targets in the cavity. The high energy γ electron oscillating between the two targets play a major role in generation the dense plasma. The conductor film can be continuously deposited by this sputtering method at high rate. Cu film is deposited at rates above 120nm/min under low gas pressures of 2.7×10 -2 Pa.
出处
《华中理工大学学报》
EI
CAS
CSCD
北大核心
1999年第2期70-72,共3页
Journal of Huazhong University of Science and Technology
基金
国家自然科学基金
