摘要
纳米硅薄膜（ｎｃＳｉ∶Ｈ）是一种新型低维人工半导体材料，它具有新颖的结构特征与独特的物理性质。综合评述了这种材料在制备方法、结构特征、输运性质和发光特性等方面的最新研究进展，并指出了今后的发展方向。
Nanometer silicon (nc Si∶H) film is a new low dimensional semiconductor materials which has new structure characteristics and unique photo physical properties. The research & developments on fabrication methods, structure characteristics, transport and photoluminescence properties of this film materials was reviewed in this paper, and its developmental directions in future were pointed out.
出处
《稀有金属》
EI
CAS
CSCD
北大核心
1999年第1期42-55,共14页
Chinese Journal of Rare Metals
基金
国家自然科学基金
河北省自然科学基金
关键词
纳米硅薄膜
制备方法
结构特征
输运性质
半导体
Nanometer silicon film, Fabrication method, Structure characteristic, Transport property, Photoluminescence property
