MOVPE生长CdTe/GaAs薄膜的表面形貌控制

Domination of Surface Morphology of CdTe/GaAs Film Grown by MOVPE

通过优化ＧａＡｓ表面制备工艺、反应管清洁处理工艺、ＧａＡｓ表面预处理工艺、生长条件及优选ＧａＡｓ衬底方向等措施，在水平与常压ＭＯＶＰＥ装置中，用二乙基锌（ＤＥＺｎ）、二甲基镉（ＤＭＣｄ）、二异丙基碲（ＤｉＰＴｅ）和元素汞，采用互扩散多层工艺（ＩＭＰ），在ＧａＡｓ衬底上生长出了ＭＣＴ／ＣｄＴｅ／ＧａＡｓ，比较了采用优化工艺前后薄膜的电子显微镜形貌相，表明采用优化工艺后薄膜的表面形貌有了明显改进。

Adopting the optimal growing conditions, CdTe/GaAs epitaxial film was grown using DEZn, DMCd, DiPT and Hg with horizontal MOVPE apparatus under normal pressure by the interdiffused multilayer process (IMP). The surface morphology of the films grown with and without optimal process was compared by scanning electron microscope. The results show that the surface morphology of MCT film has marked progress after adopting optimal process.