摘要
以WO3粉体合成的W络合离子作为前驱液,超声喷雾热裂解法（USP）制备出WO_3薄膜,研究前驱液中H_2O_2添加量、薄膜沉积温度和薄膜退火温度对WO_3薄膜光电化学性能的影响,利用XRD、UV-vis和光电流光谱（IPCE）等对薄膜进行表征,实验结果表明,USP制备的WO_3薄膜为单斜相且沿（200）晶面优势生长;前驱液中双氧水量的增加导致WO_3薄膜禁带宽度（E_g）增加;薄膜的平带电位（Vfb）在-0.27^-0.05V之间（vs.SCE,pH=7）,且掺杂浓度随退火温度升高而降低;在0.1M的Na_2SO_3溶液中,薄膜的IPCE随退火温度升高而降低,随H_2O_2量的减小IPCE增高。
WO3 films were fabricated by Ultrasonic Spray Pyrolysis （USP） using W complex ion precursor prepared by WO3 powder. The effects of addition amount of hydrogen peroxide, the deposited and annealing temperatures on the photoeleetroehemical properties of WO3 films were investigated. The films were characterized by X-ray diffraction （XRD）, UV-vis spectroscopy, and the incident photon to current efficiency （IPCE）. The results showed that the ultrasonic spray pyrolyzed WO3 films were of monoclinic phase with preferred growth along （200） textured orientation. In 0.1 mol L^-1 Na：SO3 aqueous solution, the flat band （Vfl3） of the thin film was in the scope of -0.27- -0.05V（ vs. SCE, pH=7）, Both the donor density and IPCE values reduced with the increasing of annealing temperature.
基金
科技部863项目（No.2006AA052102）,教育部科技创新工程重大项目培育资金项目（No.707050）.高等学校博士学科点专项科研基金（No.20060610023）.成都市科技局攻关计划（No.06GGYB449GX-030和07GGZDl39GX）.
