期刊文献+

多功能抗激光损伤高反射膜 被引量:7

Anti-laser-induced damage high reflectance film with multifunction
下载PDF
导出
摘要 为了能同时满足半导体激光器和YAG激光器对薄膜的特殊要求,在分析高反射膜理论的基础上,选取TiO_2和SiO_2为高、低折射率材料镀制了周期性多层介质高反射膜。研究了材料的光学及机械特性,重点解决了薄膜的消偏振和抗激光损伤问题。实验采用电子束真空镀膜并加以考夫曼离子源辅助沉积,利用TFC软件进行膜系设计,通过调整镀膜工艺参数和监控方法,在10 mm×1.8 mm的K9基底上镀制了符合要求的高反射膜,结果表明,当激光以45°入射时,薄膜在900~1 100 nm的p光与s光的反射率均大于99.95%。所制备的高反射膜性能稳定,抗激光损伤阈值高,能同时满足两种激光器的使用要求。 In order to meet the special requirements of semiconductor lasers and YAG lasers for films synchronously, the principles of a high reflectance film were researched. Then, by choosing the TiO2 and SiO2 films as the higher and lower reflectance materials, a high laser-induced damage threshold reflectance film was deposited. The optical and mechanical properties of the materials were investigated and the depolarization and anti-laser-induced damage of the film were overcome, In experiments, the electron beam vacuum coating and the Kaufman ion source assisted technique were used to deposit the film and the TFC software was used to design the thin-film structure. By adjusting the parameters of coating process and monitor method, the high reflectance film was successfully deposited on a 10 mm ×1.8 mm K9 substrate. Obtained results show that the both reflectances of p-component and s-eomponent have exceeded 99.95 % at the wavelength of 900 nm - 1 100 nm when the incidence of laser is 45°. The experiments demonstrate that the high reflectance film has a stable property and a high laser-induced damage threshold, and it is suitable for both semiconductor lasers and YAG lasers.
机构地区 长春理工大学
出处 《中国光学与应用光学》 2010年第3期274-278,共5页 Chinese Optics and Applied Optics Abstracts
关键词 光学薄膜 高反射膜 激光损伤 消偏振 optical thin-film high reflectance film laser-induced damage depolarization
  • 相关文献

参考文献7

二级参考文献33

  • 1孙艳芳,金珍花,宁永强,秦莉,晏长岭,路国光,套格套,刘云,王立军,崔大复,李惠青,许祖彦.高功率底发射VCSELs的制作与特性研究[J].光学精密工程,2004,12(5):449-453. 被引量:15
  • 2邹意会,张荣康.超高性能激光反射镜[J].激光与光电子学进展,1995,32(11):14-16. 被引量:1
  • 3.光学仪器设计手册(上册)[M].北京:国防工业出版社,1971.421.
  • 4平泽一男.大阪工业技术试验学报,1986,37:85-85.
  • 5林永昌 卢维强.光学薄膜原理[M].北京:国防工业出版社,1989.323.
  • 6YUDA M,SASAKI T,TEMMYO J,et al.High-power highly reliable 1.02-1.06μm InGaAs strained-quantum-well laser diodes[J].IEEE Quantum Electronics,2003,39(12):1515-1519.
  • 7YUDA M,TEMMYO J,SASAKI T,et al.High-power highly reliable 1.06 μm InGaAs strained-quantum-well laser diodes by low-temperature growth of InGaAs well layers[J].Electronics Letters,2003,39(8):661-662.
  • 8LICHTENSTEIN N,MANZ Y,MAURON P,et al.325 Watt from 1cm wide 9xx laser bars for DPSSL-and FL-applications[J].SPIE,2005,5711:1-11.
  • 9WATERS R G,YORK P K,BEERNINK K J,et al.Viable strained-layer laser at λ=1 100 nm[J].J.Appl.Phys.lett,1990,67:1132-1143.
  • 10SCHLENKER D,MIYAMOTO T,KOYAMA Z,et al.Growth of highly strained GaInAs/GaAs quantum wells for 1.2 μm wavelength lasers[J].Cryst.Growth,2000,209:27-36.

共引文献74

同被引文献74

引证文献7

二级引证文献28

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部