用气液固相互反应方法生长线状硅晶研究

Research on Silicon Crystal Wires Growth by Vapor-Liquid-Solid Reaction Method

以SiH4为生长气源，利用VLS（气相一液相一固相）互反应生长机制，在RT－CVD生长设备上通过向（111）硅衬底表面引入Au，生长出长达数个微米而直径小于1μm的垂直于衬底表面的线状晶体。对生长出的线状晶体作了扫描电镜观察，并分析讨论了生长的异常现象。

We report a possible approach to fabricate quantum wires normal to the surface of the substrate by VLS (Vapor, Liquid & Solid)interreaction mechanism. The whole experimental process, which is similar to usual growth in CVD chambers in most steps, is distinguished by introducing liquid phase such as An-St eutectic in the groWth through plasma vaporation and heating in CVD chamber just before normal growth steps. Under the reasonable conditions (70℃ -- 750℃ and SiH4 3sccm), silicon whiskers trimly normal to the surfaceof the substtate are observed by SEM. Serveral interesting phenomena and results are also discussed and a conclusion drawn by foregoers is testified as well.