低介电常数硅基薄膜后处理的研究进展

Research on the Progress of Nanoporous low k SiO_x Materials

综述了近年来国际上低介电常数纳米多孔SiOx薄膜材料的发展状况,重点论述了其后处理原理及工艺、材料结构特点及存在的缺陷,分类指出了后处理方法对材料改性的影响及存在的问题,同时提出了未来的研究方向和发展前景。

The nanoporous low dielectric constant（low k） SiOx thin films are compatible with the existing silicon device technology. But its lower mechanical properties and moisture resistance hinder the commercial application process. This paper reviews the development of nanoporous low k SiOx materials and discusses the principles of the post treatment. Through describing the structural characteristics and the existing defects of the material, we summed up the recent preparation method and post-treatment means, sorted out the effects of post-treatment process, pointed out the existing problem, and set out the future research directions and prospects for its development.