在侧壁形成导热膜的GaN基发光二极管

GaN-based Light-emitting Diodes with Heat Transferring Layer Formed on the Side Wall

研制了一种在侧壁形成导热膜的GaN基发光二极管(LED),其中导热层由氮氧化铝形成,导热层外再覆盖一保护层,保护层选自氧化物、氮化物或氟化物。对LED进行电流加速老化实验,分析输出功率随老化时间的变化关系,可以看到侧壁形成导热膜的GaN基LED的输出功率衰减缓慢。实验表明由于氮氧化铝膜具有良好的导热性,其可以有效地耗散发光部分产生的热量,因此在器件侧壁形成AlON导热膜可以改善GaN基LED的输出特性并提高器件的可靠性。

GaN-based light-emitting diodes（LEDs） with a heat transferring layer formed on the side wall are grown,and the heat transferring layer is formed of aluminum oxynitride,and a layer of protective film formed of an oxide or a nitride or a fluoride covers the heat transferring layer. Current accelerated aging experiments on LEDs were carried out and the relation of the output power with the aging time was analyzed. It is clearly shown that the output power of the GaN-based LEDs decreases slightly. Owing to its excellent heat conductivity,the AlON film can effectively dissipate the heat generated at the light emitting portion. So it is concluded that the formation of heat transferring layer on the side wall is helpful for the improvement of the outputs characteristic and the reliability.