电极形状对GaN基发光二极管芯片性能的影响

Effects of electrode shape on the properties of GaN-based light-emitting diode

采用Crosslight APSYS这一行业专业软件对p-GaN,InGaN/InGaN多量子阱,n-GaN和蓝宝石的芯片结构研究了不同电极形状与器件的光电性能之间的关系.优化设计了普通指形电极、对称型指形电极、h形指形电极、旋转形电极、中心环绕形电极、树形电极等6种电极结构.通过电极优化设计,电流分布更加均匀,减小了电流的聚集效应.优化后的电极结构结果表明:芯片的电特性得到了提高,芯片的光特性得到了明显改善,芯片的出光效率大幅度提高,芯片的转化效率得到了提升.

Using Crosslight APSYS software,we study the effect of the electrode shapes on the electrical and optical properties for the chip structures of p-GaN,InGaN /InGaN multiple quantum well,n-GaN and sapphire.Six kinds of optimized electrodes are presented.By optimzing the electrode shape,the current density distribution are more uniform,and the current crowding effects are reduced.And for the chips with optimized electrodes their electrical and optical properties are improved,and the light emission efficiencies and transferring efficiencies have been also improved.