自升温效应下的GaAs　MESFET大信号模型

A Large-Signal Model for the GaAs MESFET Considering Self-Heating Effect

本文首先分析GaAsMESFET在自升温效应下的升温幅度，然后结合器件电学参数随温度变化的特点，对器件的大信号等效电路模型进行了自升温效应下的修正。修正后的模型更准确地反映了器件的工作特性，应用于GaAsMESFET功率MMICCAD中能进一步提高电路的设计精度。

The temperature rise in the GaAs MESFET under self-heating effect is analyzed in this paper. The MESFET large-signal model considering the change of electrical parameters dependent on temperature is modified then. This revised model describes the characteristics of GaAs MESFETs more accurately, and improves the precision of MMIC CAD.