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The Bipolar Field-Effect Transistor:Ⅷ.Longitudinal Gradient of Longitudinal Electric Field(Two-MOS-Gates on Pure-Base)

The Bipolar Field-Effect Transistor:Ⅷ.Longitudinal Gradient of Longitudinal Electric Field(Two-MOS-Gates on Pure-Base)
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摘要 This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors(BiFETs) with a pure base and two MOS gates operating in the unipolar(electron) current mode.These nMOS-BiFETs,known as nMOS-FinFETs,usually have electrically short channels compared with their intrinsic Debye length of about 25μm at room temperatures.These longitudinal electric current terms are important short-channel current components,which have been neglected in the computation of the long-channel electrical characteristics.This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm. This paper evaluates the electric current terms from the longitudinal gradient of the longitudinal electric field in Bipolar Field-Effect-Transistors(BiFETs) with a pure base and two MOS gates operating in the unipolar(electron) current mode.These nMOS-BiFETs,known as nMOS-FinFETs,usually have electrically short channels compared with their intrinsic Debye length of about 25μm at room temperatures.These longitudinal electric current terms are important short-channel current components,which have been neglected in the computation of the long-channel electrical characteristics.This paper shows that the long-channel electrical characteristics are substantially modified by the longitudinal electrical current terms when the physical channel length is less than 100 nm.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2010年第7期1-7,共7页 半导体学报(英文版)
基金 supported by the CTSAH Associates(CTSA),founded by the late Linda Su-Nan Chang Sah.
关键词 bipolar field-effect transistor pure base intrinsic Debye length long-channel characteristics shortchannel correction bipolar field-effect transistor pure base intrinsic Debye length long-channel characteristics shortchannel correction
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参考文献10

  • 1Sah Chih-Tang and Jie Binbin, "The Bipolar Field-Effect Transistor: XIII. Physical Realizations of the Transistor and Circuits (One-Two-MOS-Gates on Thin-Thick Pure-Impure Base)," Journal of Semiconductors, 30(2), 021001 - 1-12, February 2009.
  • 2Jie Binbin and Sah Chih-Tang, "The Bipolar Field-Effect Transistor: VI. The CMOS Voltage Inverter Circuit (Two-MOS-Gates on Pure-Base)," Journal of Semiconductors, 29(11), 2079-2087, November 2008.
  • 3Jie Binbin and Sah Chih-Tang, "The Bipolar Field-Effect Transistor: VII. The Unipolar Current Mode for Analog-RF Operation (Two-MOS-Gates on Pure-Base)," Journal of Semiconductors, 30(3), 031001-1- 8, March 2009.
  • 4Chih-Tang Sah and Bin B. Jie, "The Bipolar Field-Effect Transistor: I. Electrochemical Current Theory (Two-MOS-Gates on Pure-Base)," Chinese Journal of Semiconductors, 28(11), 1661- 1673, November 2007.
  • 5Sah Chih-Tang and Jie Binbin, "The Theory of Field-Effect Transistors: XI. The Bipolar Electrochemical Currents (1-2-MOS- Gates on Thin-Thick Pure-Impure Base)," Chinese Journal of Semiconductors, 29(3), 397409, March 2008.
  • 6Jie Binbin and Sah Chih-Tang, "The Theory of Field-Effect Transistors: XII. The Bipolar Drift and Diffusion Currents (1-2-MOS- Gates on Thin-Thick Pure-Impure Base)," Journal of Semiconductors, 29(7), 1227-1241, July 2008.
  • 7Chih-Tang Sah, Fundamentals of Solid State Electronics, 1001 pp, World Scientific Publishing Company, 2001.
  • 8Chih-Tang Sah and Bin B. Jie, "A History of MOS Transistor Compact Modeling," Keynote. Technical Proceedings Workshop on Compact Modeling (WCM), Abstract on pp. 1-2 and full text on pp. 349-390. Editors: Xing Zhou, Matthew Laudon and Bart Romanowicz. NSTI Nanotech2005, May 8-12, 2005. Online: http://www.nsti.org/publ/Nanotech2005 WCM/1429.pdf.
  • 9Sah's 1995 derivation. Chih-Tang Sah, "Space Charge Theory of the MOS Transistor," versionl.1, 35 pages, December 12, 1996, Intel Research Grant Report, unpublished.
  • 10Bin B. Jie and Chih-Tang Sah, "Theory of Bipolar MOSFET (BiFET) with Electrically Short Channels," Technical Proceedings of NSTI-Nanotech 2010, vol. 3, Workshop on Compact Modeling, June 2010.

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