摘要
Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs（111） B substrates via Au catalyzed vapor-liquid-solid mechanism.We found that the grown nanowires are rod-like in shape and have a pure zinc blende structure;moreover,the growth rate is independent on its diameters.It can be concluded that, direct impingement of vapor species onto the Au-Ga droplets contributes to the growth of the nanowire;in contrast,the adatom diffusion makes little contribution.The results indicate that the droplet acts as a catalyst rather than an adatom collector,larger diameter and high supersatuation in the droplet leads to the pure zinc blende structure of the nanowire.
Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs（111） B substrates via Au catalyzed vapor-liquid-solid mechanism.We found that the grown nanowires are rod-like in shape and have a pure zinc blende structure;moreover,the growth rate is independent on its diameters.It can be concluded that, direct impingement of vapor species onto the Au-Ga droplets contributes to the growth of the nanowire;in contrast,the adatom diffusion makes little contribution.The results indicate that the droplet acts as a catalyst rather than an adatom collector,larger diameter and high supersatuation in the droplet leads to the pure zinc blende structure of the nanowire.
基金
Project supported by the Basic Research on Compatible Heterogeneous Integration and Functional-Microstructure Assemblage for the Development of Novel Optoelectronic Devices,China(No.2010CB327600)
the 111 Program of China(No.B07005),the Program of Key International Science and Technology Cooperation Projects(No.2006DFB 11110)
the New Century Excellent Talents in University (NCET-08-0736)
the National High Technology R & D Program of China(Nos.2009AA03Z405,2009AA03Z417)
the Chinese Universities Scientific Fund(Nos.BUPT2009RC0409,BUPT2009RC0410)
the Program for Changjiang Scholars and Innovative Research Team in University,MOE(No.IRT0609).
