斯蒂芬酸铅的半导体桥点火试验研究

Experimental Research on Semiconductor Bridge Ignition for LTNR

通过对半导体桥(Semiconductor Bridge,SCB)装药条件下发火电压、发火电容及积分能量对点火时间影响的对比,结合不同点火条件下,桥体两端电压曲线、电流曲线和电流二次峰出现时间的比较,研究了斯蒂芬酸铅(LTNR)的半导体桥点火机理。试验发现特定的点火电路下,SCB点火时间存在一个临界值,且SCB等离子体形成的快慢直接影响点火时间。在充电电压从大到小的点火过程中,在桥与药剂之间存在2种不同的点火机理,在较高点火电压下为等离子体点火机理,在低电压为热点火机理。

The ignition mechanism of the Semiconductor Bridge （SCB） ignition for LTNR was studied by comparing the effects of the firing voltage, capacitance and integral energy on the ignition time. The curves of voltage, current of the SCB and the appearing time of the second current peak under the same ignition condition were analyzed also. The results indicate that a critical function time exists for a given ignition circuit and it is affected by the forming time of the plasma. Two different ignition mechanisms are found. They show that the LTNR is ignited by plasma generated by SCB at high firing voltage and by Joule heat at low firing voltage for a given capacitor.