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PMOS辐射检测传感器阈值漂移特性的Medici模拟

Threshold drift characteristics Simulations of PMOS radiation detecting sensor
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摘要 本文研究了PMOS辐射检测传感器的阈值电压漂移特性,文中选择三种具有不同参数的器件结构进行讨论,重点考察了器件尺寸参数对阈值漂移特性的影响,运用二维数值模拟软件MEDICI进行数值模拟和分析,模拟结果表明栅氧厚度、沟道长度和宽度以及沟道掺杂浓度对阈值电压漂移特性具有不同形式的影响。 The threshold shift characteristics of PMOS radiation detection sensor has been researched in this paper. We chose three device structures with different parameters to di-scuss the characteristics,and the impact of device size on the threshold voltage drift is the focus of discussion. Two dimensional numerical simulation software MEDICI has been used for numerical calculation and analysis,and the results show that the gate oxide thickness、channel length and width as well as the channel doping concentration has different impact on the sensor＇s characteristics.
作者 刘荣林 程月东 钟传杰
机构地区 江南大学信息工程学院
出处 《微计算机信息》 2010年第19期102-104,共3页 Control & Automation
关键词 PMOS 阈值电压 漂移特性 MEDICI PMOS threshold voltage shift characteristics MEDICI
分类号 TN386.1 [电子电信—物理电子学]
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参考文献12

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微计算机信息
2010年 第19期

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