摘要
A complementary metal oxide semiconductor （CMOS） voltage controlled ring oscillator for ultra high frequency （UHF） radio frequency identification （RFID） readers has been realized and characterized. Fabricated in charter 0.35 p.m CMOS process, the total chip size is 0.47 × 0.67 mm^2. While excluding the pads, the core area is only 0.15 ×0.2 mm^2. At a supply voltage of 3.3 V, the measured power consumption is 66 mW including the output buffer for 50 Ω testing load. This proposed voltage-controlled ring oscillator exhibits a low phase noise of - 116 dBc/Hz at 10 MHz offset from the center frequency of 922.5 MHz and a lower tuning gain through the use of coarse/fine frequency control.
A complementary metal oxide semiconductor （CMOS） voltage controlled ring oscillator for ultra high frequency （UHF） radio frequency identification （RFID） readers has been realized and characterized. Fabricated in charter 0.35 p.m CMOS process, the total chip size is 0.47 × 0.67 mm^2. While excluding the pads, the core area is only 0.15 ×0.2 mm^2. At a supply voltage of 3.3 V, the measured power consumption is 66 mW including the output buffer for 50 Ω testing load. This proposed voltage-controlled ring oscillator exhibits a low phase noise of - 116 dBc/Hz at 10 MHz offset from the center frequency of 922.5 MHz and a lower tuning gain through the use of coarse/fine frequency control.
基金
supported by the Natural Science Foundation of Jiangsu Province (BK2009153)
Specialized Research Fund for the Doctoral Program of Higher Education of China (20090092120012)
Open Research Fund Program of Jiangsu Key Laboratory of ASIC Design (JSICK0605)
