应变层超晶格GaN-AlN的电子结构

Electronic Structure of Strained layer Superlattice GaN AlN

采用有效质量理论６带模型，计算了应变层超晶格ＧａＮＡｌＮ（００１）的电子结构，具体计算不同应变状态的价带子能带色散曲线、光吸收曲线。分析了应变状态以及重轻空穴和自旋轨道分裂带相互作用对子带结构的影响。

The electronic structure of strained layer superlattice GaN AlN(001) has been studied within framework of the 6 band Luttinger model in the effective mass theory. The valence band structure and the absorption spectra for different strain conditions are calculated. The effects of strain and coupling among heavy hole, light hole, and spin split off bands on valence band structure are discussed.