SiO_x、Si/Si_(1-x)Ge_x的横向磁阻和迁移率的无接触测量

Contactless Measurement of Magnetoresistance and Calculating Method of the Hall Mobility for SiO x ,Si/Si 1- x Ge x

用分子束外延技术在ｐ型Ｓｉ衬底上生长成了Ｓｉ／Ｓｉ１－ｘＧｅｘ应变层超晶格和掺铒（Ｅｒ）ＳｉＯｘ外延层，用无接触法测量了它们的横向磁阻，并且用拟合方法由横向磁阻计算了它们的迁移率。

Using Molecular Beam Epitaxy (MBE) technology, Si/Si 1- x Ge x strained superlattices and SiO x epitaxial layer doped Er are grown on p type silicon wafer. The magnetoresistance of these layers are measured by contactless method. The calculating method for the mobility in the layers is described.