InAlGaAs/GaAs量子阱的生长及其界面特性

Growth and Interface Properties of InAlGaAs/GaAs Quantum Wells

本文研究了以ＩｎＡｌＧａＡｓ作垒层的ＩｎＡｌＧａＡｓ／ＧａＡｓ量子阱的低压金属有机化合物化学汽相淀积（ＬＰ－ＭＯＣＶＤ）生长及其界面特性，发现在适当生长条件下可以解决ＩｎＧａＡｓ和ＡｌＧａＡｓ在生长温度范围不兼容的问题，得到了高质量的ＩｎＡｌＧａＡｓ／ＧａＡｓ量子阱材料．同时用Ｘ光和低温光致发光（ＰＬ）谱研究了量子阱结构的界面特性，表明适当的界面生长中断不仅可以改善界面平整度，而且能改善垒层ＩｎＡｌＧａＡｓ的质量．

Abstract The InAlGaAs/GaAs quantum wells(QWs) with InAlGaAs layers as barriers are grown by low pressure metal organic chemical vapor deposition(LP MOCVD). The study of growth reveals that high quality InAlGaAs/GaAs QWs can be obtained under proper growth interruption. The interface properties are also studied by using X ray diffraction and low temperature PL.