摘要
本文研究了以InAlGaAs作垒层的InAlGaAs/GaAs量子阱的低压金属有机化合物化学汽相淀积(LP-MOCVD)生长及其界面特性,发现在适当生长条件下可以解决InGaAs和AlGaAs在生长温度范围不兼容的问题,得到了高质量的InAlGaAs/GaAs量子阱材料.同时用X光和低温光致发光(PL)谱研究了量子阱结构的界面特性,表明适当的界面生长中断不仅可以改善界面平整度,而且能改善垒层InAlGaAs的质量.
Abstract The InAlGaAs/GaAs
quantum wells(QWs) with InAlGaAs layers as barriers are grown by low pressure metal organic
chemical vapor deposition(LP MOCVD). The study of growth reveals that high quality
InAlGaAs/GaAs QWs can be obtained under proper growth interruption. The interface properties are
also studied by using X ray diffraction and low temperature PL.
基金
国家自然科学基金