摘要
利用分子束外延方法研制的ＩｎＧａＡｓ／ＡｌＧａＡｓ应变量子阱激光器外延材料制备了窄条型脊型波导结构量子阱激光器件．通过对其５０℃高温加速老化，检测了器件的可靠性，并对器件中存在的三种典型退化行为，即快速退化、慢退化和端面光学灾变损伤进行了分析与研究．
Abstract Narrow stripe ridge waveguide structure InGaAs/AlGaAs
strained quantum well lasers are fabricated by using the epi material grown by molecular beam
epitaxy. Through the accelerated aging test at high temperature of 50℃, the reliability of the laser
devices is studied. Three typical degradation mechanisms, rapid, slow and catastrophic optical
damage, are observed and analyzed.
基金
国家"863"高技术计划项目
