摘要
本文通过在GaN衬底上生长固体C60膜制成了C60/n-GaN接触,并对其电学性质作了测量.我们发现该接触是理想因子接近于1的强整流接触异质结.在偏压为±1V时,其整流比高达106.在固定正向偏压条件下,异质结电流是温度倒数的指数函数,通过求激活能得出异质结的有效势垒高度为0.535eV.本文还发现,固体C60/n-GaN样品中C60的电导随着正向偏压的增加而迅速变大.这种现象被认为起因于n-GaN对C60的电子注入.
Abstract C 60 /n GaN contacts have been fabricated by depositing solid C 60
on n GaN films, and their electrical properties were measured. We find that the contact is a
strongly rectifying heterojunction with a rectification ratio greater than 10 6, and its ideal factor
is close to 1. Current temperature measurement shows an exponential dependence of current
on reciprocal temperature, from which the effective barrier height is determined to be 0 535eV.
The series resistance measured decreases with the increase of the forward voltage and finally
tends to be a constant value.
基金
国家自然科学基金
关键词
氮化镓
电学性质
制备
Carbon
Semiconducting gallium compounds