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单稳双稳态转变逻辑单元等效电路模型 被引量:2

Equivalent Circuit Model of MOBILE
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摘要 基于共振隧穿二极管的单片集成的单稳双稳态转变逻辑单元电路是近年出现的一种新型电路逻辑单元.本文介绍一种简单的MOBILE电路结构,给出了适合于PSPICE模拟的模型,并根据模拟结果分析了共振隧穿二极管电容的充放电过程,同时讨论了MOBILE电路工作的内部物理过程. Abstract Monolithic integrated MOBILE based on resonant tunneling diodes is a new type of logic element. A simple MOBILE structure is introduced and is simulated by PSPICE, and the charge discharge process for the capacitor of RTDs are analyzed according simulation results, the internal process of physical mechanism is clearly pictured out.
出处 《Journal of Semiconductors》 EI CAS CSCD 北大核心 1999年第4期349-352,共4页 半导体学报(英文版)
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参考文献2

  • 1Yan Zhixin,IEEE Trans Comput Aided Des Integrated Circuits Systems,1995年,14卷,2期,167页
  • 2Wang Guanwu,IEEE Trans Electron Devices,1986年,33卷,5期,657页

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  • 1李孝峰,潘炜,罗斌,邓果,赵峥.多次外光反馈下垂直腔面发射激光器非线性动态特性理论研究[J].中国激光,2004,31(12):1450-1454. 被引量:13
  • 2刘建都.CMOS数字电路的开路故障可测性设计技术[J].微电子技术,1995,23(2):34-37. 被引量:1
  • 3Tombling G,Saitoh T,Mukai T.Performance predictions for vertical cavity semiconductor laser amplifiers.IEEE J Quantum Electron,1994,30(11):2491
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  • 5Royo P,Koda R,Coldren L A.Vertical cavity semiconductor optical amplifiers:Comparison of Fabry-Pérot and rate equation approaches.IEEE J Quantum Electron,2002,38(3):279
  • 6Bjorlin E S,Riou B,Abraham P,et al.Long wavelength vertical-cavity semiconductor optical amplifier.IEEE J Quantum Electron,2001,37(2):274
  • 7Calvez S,Clark A H,Hopkins J M,et al.1.3μm GaInNAs optically-pumped vertical cavity semiconductor optical amplifier.Electron Lett,2003,39(1):100
  • 8Sánchez M,Wen P,Gross M,et al.Nonlinear gain in vertical-cavity semiconductor optical amplifiers.IEEE Photonics Technol Lett,2003,15(3):507
  • 9Adams M J,Westlake H J,O,Mahony M J,et al.A comparison of active and passive optical bistability in semiconductors.IEEE J Quantum Electron,1985,21(9):1498
  • 10Pakdeevanich P,Adams M J.Measurements and modeling of reflective bistability in 1.55μm laser diode amplifiers.IEEE J Quantum Electron,1999,35(12):1894

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