射频反应溅射制备倾斜AlN薄膜

C -axis inclined AlN films prepared by RF reactive sputtering

采用射频反应磁控溅射方法,通过旋转转盘,使衬底与靶材水平偏离一定角度,制备了C轴择优取向的倾斜AlN薄膜。用XRD分析了不同偏转角度下制备的AlN薄膜的择优取向度,用场发射扫描电镜(FE-SEM)观察了薄膜的截面形貌,并初步讨论了倾斜AlN薄膜的生长机理。分析和测试结果表明,当转盘旋转角度为10°时,AlN薄膜柱状晶倾斜最明显,倾斜角度可达25°。

C -axis inclined AlN films were prepared by rotating the turnplate with different angles in RF magnetic sputtering system. The Crystalline orientation and structure of the AlN films were investigated by X - ray diffraction, the cross - section of the inclined AlN films was observed by field emission scanning electron microscopy. The results show that AlN films exhibit inclined columnar structure up to 25° with the rotating angle of 10°. The growth mechanism of C -axis, inclined AlN films was discussed in short.