钛酸铋陶瓷靶材的热压烧结

PREPARATION OF Bi_4Ti_3O_(12) CERAMIC TARGET BY HOT-PRESS SINTERING

纯相、高致密度、结晶良好的陶瓷靶材是物理气相沉积薄膜的前提。采用热压烧结方法制备钛酸铋(Bi4Ti3O12)陶瓷靶材,重点研究了制备工艺对靶材的物相、微观结构和致密度的影响。以Bi2O3和TiO2微粉为原料,采用固相反应法,在800℃合成出纯相的Bi4Ti3O12粉体;加入过量3wt%的Bi2O3,可以有效防止烧结过程中因Bi挥发所产生的杂相,得到纯相的Bi4Ti3O12陶瓷;采用热压烧结方法,进一步实现了Bi4Ti3O12粉体的致密烧结,确定了适宜的制备条件为850℃,30MPa,2h,在该条件下制备的Bi4Ti3O12陶瓷致密度达到99%,晶粒呈片层状,大小约2～4μm,可满足靶材制备薄膜的需求。

A well-crystallized,pure phase and high density ceramic target is necessary for preparing thin films by Physical Vapor Deposition.In the present study,a Bi4Ti3O12 ceramic target was prepared by hot-press sintering,and the effects of processing parameters on the phase,microstructure and relative density of the target were investigated.Using Bi2O3 and TiO2 powders as the raw materials,pure Bi4Ti3O12 powders were synthesized at 800℃ by solid-state reaction.3wt% excess of Bi2O3 could compensate for the severe volatilization of Bi during the sintering process.Pure phase and dense Bi4Ti3O12 ceramic target was obtained at 850℃-30MPa-2h by hot-pressed sintering,which can be considered as a promising target for film deposition.