摘要
采用平均场近似方法得到层状钴氧化物系统的不对称Hubbard哈密顿量,建立了对应于该哈密顿量的重整化群流方程,求得相应的系统能带结构、粒子数期望值和临界温度.结果表明,系统发生绝缘体—金属转变的临界温度Tc随能带宽度W的降低而增大.
We adopted the way of mean field approximation to get the asymmetric Hubbard Hamiltonian and set up the equation of renormalization group flow for the layered Co-based oxides.The energy distribution and expectation values of particle number as well as critical temperature were calculated.The result indicated that critical temperature of insulator-metallic transition increases along with the width of energy band reducing.
出处
《延边大学学报(自然科学版)》
CAS
2010年第2期130-135,共6页
Journal of Yanbian University(Natural Science Edition)
基金
国家自然科学基金资助项目(10864008)
延边大学科研项目(延科合字2009第58号)
关键词
层状钴氧化物
能带结构
粒子数
绝缘体—金属转变
重整化群流方程
layered Co-based oxides
energy distribution
particle number
insulator-metal transition
renormalization group flow equation