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氮化镓生长反应模型与数值模拟研究(I) 被引量：5

Reaction Model and Numerical Simulation of Gallium Nitride Growth(I)
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摘要 对氮化镓(GaN)生长的化学反应过程进行了全面的阐述。从两条基本的反应路径出发,对各反应的机理进行了剖析,并结合近期的研究发现,提出了MOCVD生长GaN的核心反应模型。该化学反应动力学模型综合考虑了有效气相反应和表面反应,适用范围广且计算成本较小,为预测GaN薄膜的生长速率提供了一种精简的计算方法。 The reaction process of gallium nitride （GaN） growth was elucidated in details. According to the two basic reaction pathways, the mechanisms of all reactions were analyzed. The core reaction model of GaN growth in MOCVD was proposed with the help of the newly experimental observation. This reaction kinetic model was supposed to be universal, for it mainly included the effective phase reactions and surface reactions. Besides, the computation cost less, which provided a convenient method in predicting the growth rate of GaN film.
作者 王国斌 张永红 王怀兵
机构地区 中国科学院苏州纳米技术与纳米仿生研究所
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2010年第B06期160-163,共4页 Journal of Synthetic Crystals
关键词 GAN生长 反应模型 反应路径 化学反应动力学 GaN growth reaction model reaction pathways reaction kinetics
分类号 TB332 [一般工业技术—材料科学与工程]
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参考文献18

  • 1Liang C G, Zhang J. GaN-The dawn of the Third Generation Semiconductors [ J ]. Chinese Journal of Semiconductors, 1999,20 (2) :89.
  • 2Hirako A, Yoshitani M, Nishibayashi M, et al. GaN-MOVPE Growth and Its Microscopic Chemistry of Gaseous Phase by Computational Thermodynamic Analysis[ J]. Journal of Crystal Growth ,2002,237-2.39(2) : 931-935.
  • 3Hirako A, Ohkawa K. Effert of Thermal Radiation and Absorption in GaN-MOVPE Growth Modeling on Temperature Distribution and Chemical State[ J]. Journal of Crystal Growth ,2005,276:57-63.
  • 4Parikh R P, Adomaitis R A. An overview of GaN Growth Chemistry and Its Effect on Reactor Design : Application to a Planetary Radial-flow CVD System[ J]. Journal of Crystal Growth ,2006,286:259-278.
  • 5Sengupta D, Mazumder S, Kuykendall W, et al. Combined Ab initio Quantum Chemistry and Computational Fluid Calculations for Prediction of Gallium Nitride Growth [ J ]. Journal of Crystal Growth,2005,279:369-382.
  • 6Theodoropoulos C, Mountziaris T J, Moffat H K, et al. Design of Gas Inlet for the Growth of Gallium Nit.ride by Metal-organic Vapor Phase Epitaxy [ J ]. Journal of Crystal Growth,2000,217 : 65-81.
  • 7Cohrin M E, Creighton J R. GaN CVD Reactions : Hydrogen and Ammonia Decomposition and the Desorption of Gallium [ J ]. Applied Surface Science, 1998,126:69-75.
  • 8Mihopoulos T G, Gupta V, Jensen K F. A reaction-transport Model for AlGaN MOVPE Growth[ J]. Journal of Crystal Growth, 1998,195:733-739.
  • 9Hirako A, Kusakabe K, Ohkawa K. Modeling of Reaction Pathways of GaN Growth by Metalorganic Vaporphase Epitaxy Using TMGa/NH3/H2 System:a Computational Fluid Dynamics Simulation Study[ J]. Jpn. J. Appl. Phys. ,2005,44:874-879.
  • 10Creighton J R, Wang G T, Breiland W G, et al. Nature of the Parasitic Chemistry During A1GaInN OMVPE [ J ]. Journal of Crystal Growth ,2004, 261 : 204-213.

同被引文献47

  • 1Denisa A, Goglio G, Demazeau G. Gallium Nitride Bulk Crystal Growth Processes:A Review [ J]. Materials Science and Engineering: R: Reports 2006,50 : 167-194.
  • 2Bockowski M. Review: Bulk Growth of Gallium Nitride: Challenges and Difficulties [ J ]. Crystal Research and Technology,2007,42:1162-1175.
  • 3Ehrentraut D, Sitar Z. Advances in Bulk Crystal Growth of AIN and GaN[ J]. MRS. Bull. ,2009,34:259-265.
  • 4Jia H Q, Guo L W, Wang W X, et al. Recent Progress in GaN-Based Light-Emitting Diodes [ J ] Advanced Materials ,2009,21:1-6.
  • 5Safvi S A, Perkins N R, Horton M N, et al. Effect of Reactor Geometry and Growth Parameter on the Uniformity and Material Properties[ J]. Journal of Crystal Growth ,1997,182:233-237.
  • 6Dam C E C, Grzegorczyk P A, Hageman P R, et al. The Effect of HVPE Reactor Geometry on GaN Growth Rate-experiments versus Simulations [ J ]. Journal of Crystal Growth ,2004,271:192-199.
  • 7Aujol E, Napierala J, Trassoudaine A, et al. Thermodynamieal and Kinetic Study of the GaN Growth by HVPE under Nitrogen [ J ]. Journal of Crystal Growth ,2001,222:538-548.
  • 8Shao Y L, Zhang L, Hao X P, et al. Influence of GaC1 Carrier Gas Flow Rate on Properties of GaN films Grown by Hydride Vapor-phase Epitaxy [ J ]. Journal of Alloys and Compounds, 2011, doi: 10.1016/j. jalleom. 2011.02.168.
  • 9Zhang J X, Qu Y, Chen Y Z, et al. Structural and Optical Characterization of GaN Epilayers Grown on Si( 111 ) Substrates by Hydride Vapor, phase Epitaxy[ J ]. Journal of Crystal Growth ,2005,282 : 137-142.
  • 10Heinke H, Kirehner V, Einfeldt S, et al. X-ray Diffraction Analysis of the Defect Structure in Epitaxial GaN[J]. Applied Physics Letters,2000, 77:2145 -2147.

引证文献5

二级引证文献14

人工晶体学报
2010年 第B06期

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