化学输运法制备钨单晶涂层及其表征

Preparation and Characterization of Tungsten Single Crystals Coating by Chemical Transport Method

以晶体生长理论为基础,采用化学气相沉积工艺在常压下高效制备了高纯钨管。随后,以制备的高纯钨管为原料,在真空条件下通过化学输运方法在钼单晶棒表面制备出大面积特定晶体学取向的钨单晶涂层。利用X射线衍射和电子背散射衍射技术对获得的钨涂层进行了单晶定性和晶体质量分析;采用辉光放电质谱法对其进行了纯度测定;通过对单晶涂层进行纳米压痕实验和扫描电镜观察,获得了其微观力学性能和形貌等相关结果。结果表明,采用化学输运方法可以制备出具有特定晶体学取向、结晶完整性好和纯度极佳的高纯钨单晶涂层。

High purity W tube is deposited on copper tube by chemical vapor deposition at atmospheric pressure. Using the high purity W tube as raw material, single-crystal W film was deposited on the single-crystal molybdenum rod by chemical transport deposition in vacuum condition. An analysis of the single-crystal characterization and crystal perfection of the W film were obtained is made by using XRD and EBSD. By using GDMS, the degree of purity of W film was determined. By conducting a test of nanoindentation and observation through SEM of the single film, relative results concerning its mechanical properties and features has been obtained. The results show that by using chemical transport deposition high, purity W single-crystal film of specific crystallographic orientation and perfect crystal can be deposited.