期刊文献+

Effects of Temperature on Reverse Short Channel Effect in Pocket Implanted Sub-lO0 nm n-MOSFET

Effects of Temperature on Reverse Short Channel Effect in Pocket Implanted Sub-lO0 nm n-MOSFET
下载PDF
导出
出处 《材料科学与工程(中英文版)》 2010年第7期18-23,共6页 Journal of Materials Science and Engineering
关键词 MOSFET 通道效应 低温度 金属氧化物半导体场效应晶体管 纳米 反向 电压模型 阈值电压 Pocket implantation, linear pocket profile, temperature effect, reverse short channel effect, threshold voltage
  • 相关文献

参考文献19

  • 1K. Y. Lim, X. Zhou, Modeling of threshold voltage with non-uniform substrate doping, in: Proc. of the IEEE International Conference on Semiconductor Electronics (ICSE'98), Malaysia, 1998, pp. 27-31.
  • 2B. Yu, C.H. Wann, E.D. Nowak, K. Noda, C. Hu, Short channel effect improved by lateral channel engineering in deep-submicrometer MOSFETs, IEEE Transactions on Electron Devices 44 (1997) 627-633.
  • 3B. Yu, H. Wang, O. Millic, Q. Xiang, W. Wang, J.X. An, M.R. Lin, 50 nm gate length CMOS transistor with super-halo: design, process and reliability, IEDM Tech. Digest (1999) 653-656.
  • 4K.M. Cao, W. Liu, X. Jin, K. Vasant, K. Green, J. Krick, T. Vrotsos, C. Hu, Modeling of pocket implanted MOSFETs for anomalous analog behavior, IEDM Tech. Digest (1999) 171-174.
  • 5Y.S. Pang, J.R. Brews, Models for subthreshold and above subthreshold currents in 0.1 μm pocket n-MOSFETs for low voltage applications, IEEE Transactions on Electron Devices 49 (2002) 832-839.
  • 6M.K. Khanna, M.C. Thomas, R.S. Gupta, S. Haldar, An analytical model for anomalous threshold voltage behavior of short channel MOSFETs, Solid State Electronics 41 (1997) 1386-1388.
  • 7Y. Taur, E.J. Nowak, CMOS devices below 0.1 μm: how high will go?, IEDM Technical Digest (1997) 215-218.
  • 8M.H. Bhuyan, Q.D.M. Khosru, Linear pocket profile based threshold voltage model for sub-100 nm n-MOSFET incorporating substrate and drain bias effects, in: Proc. of the 5th International Conference on Electrical and Computer Engineering (ICECE 2008), Dhaka, Bangladesh, 2008, pp.447-451.
  • 9S.K. Tewksbury, N-Channel enhancement-mode MOSFET characteristics from 10 to 300 K, IEEE Electron Device Letters 28 (1981) 1519-1529.
  • 10R. Wang, J. Dunkley, T.A. DeMassa, L.F. Jelsma, Threshold voltage variations with temperature in MOS transistors, IEEE Electron Device Letters 18 (1971) 386-388.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部