期刊文献+
任意字段
题名或关键词
题名
关键词
文摘
作者
第一作者
机构
刊名
分类号
参考文献
作者简介
基金资助
栏目信息

一种能抑制HBT Kink效应的新型复合管

Novel Composite Transistor for Suppression the Kink Phenomenon in HBT
下载PDF
导出
摘要 介绍了GaAs异质结双极型晶体管（HBT）的Kink效应及其对宽带匹配的影响,并根据负反馈原理,提出了一种新型的HBT复合管结构。通过对该结构进行小信号分析和计算机软件仿真,该复合晶体管在整个测试频段内输出阻抗接近于一个简单的RC串联电路,并且输出电阻在很宽的频率范围内保持稳定。采用2μm InGaP/GaAs HBT半导体工艺技术流片测试,结果表明,在0.1-20 GHz（接近该HBT的截止频率）的频率范围内所提出的新型HBT复合管抑制了Kink效应并与理论分析结果及计算机仿真结果相吻合。采用该复合管作为宽带放大器的有源器件可以在很大程度上简化匹配电路的设计并且不会显著增加芯片面积和功耗。 The Kink phenomenon and its effect on broad band matching are introduced and analyzed,and a novel composite HBT basing on the principle of negative feedback is proposed.According to the small signal analysis and the computer software simulation,the output impedance of a composite transistor could be represented by a ＂shifted＂ series RC circuit,and keep a constant value.A test die chip using 2 μm InGaP/GaAs HBT technology was fabricated.The measurement shows that the new composite HBT structure is able to eliminate the Kink phenomenon over a very broad band from 0.1 GHz to 20 GHz（nearly reaches this HBT＇s cutoff frequency）.Furthermore,the measurement is quite close to the results from theoretical analysis and the computers simulation.In a word,the composite transistor structure can simplify the design of a broadband amplifier.Besides,the increase of chip area and power consumption is negligible.
作者 滑育楠 梁聪 高怀 杨立武 李贯平
机构地区 东南大学国家ASIC系统工程中心 中芯国际集成电路制造股份有限公司 The Henry Semueli School of Engineering University of California
出处 《半导体技术》 CAS CSCD 北大核心 2010年第7期669-672,共4页 Semiconductor Technology
关键词 宽带匹配 KINK效应 S参数 异质结双极晶体管 broadband matching Kink phenomenon S-parameters HBT
分类号 TN604 [电子电信—电路与系统]
  • 相关文献

参考文献10

  • 1CHEN P F, HSIN Y M T, WELTY R J, et al. Application of GaInP/GaAs DHBTs to power amplifiers for wireless communications [ J]. IEEE Trans on MTT, 1999,47 (8):1433- 1438.
  • 2TAKAHASHI T, SASA S, KAWANO A, et al, High-reliability lnGaP/GaAs HBTs fabricated by self-aligned process [C]// Proc of Electron Devices Meeting. San Francisco, CA, USA,1994:191-194.
  • 3TU H Y, LIN Y S, CHEN P Y, et al. An analysis of the anomalous dip in scattering S22 parameter of lnGaP GaAs Heterojunction Bipolar Transistors (HBTs) [ J]. IEEE Trans on ED,49 (10) : 1831-1833.
  • 4LU S S,CHEN T W,CHEN H C,et al. The origin of the Kink phenomenon of transistor scattering parameter S22 [J]. IEEE Trans on MTT,2001,49 (2) :333-340.
  • 5LU S S,MENG C C, CHEN T W, et al. A novel interpretation of transistor S-parameters by poles and zeros for RFIC circuit design [ J ]. IEEE Trans on MTT, 2001,49 (2) : 406-409.
  • 6LIN Y S, LU S S. An analysis of the Kink phenomenon of scattering parameter S22 in RF power MOSFETS for system on chip ( SOC ) applications [J]. Microwave and Optical Technology Letters,2003,36 (5) :371-376.
  • 7LIN Y S, LU S S. An analysis of small-signal gate-drain resistance effect on RF power MOSFETs [J]. IEEE Trans on ED,2003,50 (2) :525-528.
  • 8SEOL H, PARK C K, LEE D H, et al. A 2.4 GHz HBT power amplifier using an on-chip transformer as an output matching network, microwave symposium digest [C] // Proc of 2008 IEEE MTT-S Int. Atlanta, USA,2008 : 875-878.
  • 9IWAI T, OHARA S, YAMADA H S, et al. High efficiency and high linearity InGaP/GaAs HBT power amplifiers: matching techniques of source and load impedance to improve phase distortion and linearity [ J]. IEEE Trans on ED, 1998,45 (6): 1196-1200.
  • 10LIN Y S, LIANG H B, CHEN C C, et al. Small signal intrinsic base resistance effect on InP-InGaAs, InGaP-GaAs and SiGe HBTs [C] // Proc of 2005 IEEE Device Research Conf. Grenble, France, 2005 : 65-66.
半导体技术
2010年 第7期

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部