沟道-衬底结对旁栅偏压条件下GaAs MESFET沟道电流迟滞行为的影响

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摘要旁栅偏压条件下,GaAsMESFET沟道电流的迟滞行为与衬底深能级EL2和沟道-衬底结的特性密切相关.实验研究发现,外加旁栅偏压条件下,沟道电流的迟滞行为发生的根本原因是沟道-衬底结耗尽区展宽和收缩对深能级EL2的电子俘获和电子发射的响应比较慢.当旁栅偏压稳态变化时,沟道电流的迟滞现象将消失,即存在一个迟滞行为消失的"准静态".这一发现和结论对于MMIC的设计将具有比较重要的指导意义和参考价值.

作者丁勇严晓浪

机构地区浙江大学超大规模集成电路设计研究所

出处《科学通报》 EI CAS CSCD 北大核心 2010年第20期2047-2050,共4页 Chinese Science Bulletin

关键词 GAAS MESFET 旁栅偏压迟滞沟道-衬底结

分类号 TN386 [电子电信—物理电子学]

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参考文献2

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共引文献6

1陆生礼,丁勇,时龙兴.选择离子注入GaAs MESFET的旁栅特性研究[J].应用科学学报,2006,24(6):577-581.
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6曾建平,安宁,李志强,李倩,唐海林,刘海涛,梁毅.电子束实现210 nm栅长115 GHz GaAs基mHEMT器件[J].太赫兹科学与电子信息学报,2018,16(1):17-20. 被引量：1

1丁勇,赵福川,毛友德,夏冠群,赵建龙.旁栅电压下MESFET沟道电流的低频振荡[J].Journal of Semiconductors,2000,21(12):1228-1230. 被引量：1
2苏培林,王加贤,熊刚强,张峻诚,王娟娟.GaAs对脉冲Nd:YAG激光器的调Q和锁模[J].激光杂志,2008,29(3):17-18.
3宁珺,丁勇,夏冠群,赵福川,方伟,蒋新喜,毛友德,赵建龙.GaAs衬底深能级EL2与电路旁栅效应的光敏特性和迟滞现象[J].集成电路通讯,2000(1):15-17.
4宁珺,丁勇,毛友德,夏冠群,赵福川,赵建龙.GaAs衬底深能级EL_2与电路旁栅效应的光敏特征和迟滞现象[J].微电子技术,2000,28(2):28-30.
5秦海辰,尹周平.纯电力加载下压电陶瓷内环迟滞特性的实验研究[J].中国机械工程,2014,25(4):517-521. 被引量：2
6丁勇,赵福川,毛友德,夏冠群,赵建龙.GaAs MESFET的漏源电压对旁栅阈值电压的影响[J].半导体技术,2000,25(4):28-30.
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8宁珺,丁勇,夏冠群,赵福川,毛友德,赵建龙.GaAs衬底深能级EL2与电路旁栅效应的光敏特性和迟滞现象[J].半导体杂志,2000,25(1):23-26. 被引量：1
9丁勇,陆生礼,赵福川.旁栅偏压对GaAs MESFET沟道电流中低频振荡的调制[J].科学通报,2005,50(11):1145-1148.
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沟道-衬底结对旁栅偏压条件下GaAs MESFET沟道电流迟滞行为的影响

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