摘要
本文报道了在TGS中掺入适量的金属铍离子的新晶体生长特性,晶体形貌分析,同时测定了新晶体的热释电系数(P)、介电常数(ε)、居里温度(Tc)。实验表明,在TGS中掺入金属铍离子生成的TGAS:Be2+晶体的优值比明显提高。
Single crystals of Be 2+ doped triglycine sulfate have been grown from low temperature solutions with the slow cooling method.The Content of dopants in crystal has been determined and changes of crystal properties due to dopants are described.Values of pyrodectric coefficient,dielectric constant,loss tangents and figures of merit were measured in detail . Comparision of the properties between the doped TGS crystal and pure TGS crystal are given.It is found that TGS single crystal doped with suitable amount of Be 2+ grows easily and has better figures of merit than that of purre TGS single crystal.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第1期62-64,共3页
Journal of Synthetic Crystals