负衬底偏压热灯丝CVD金刚石膜成核的研究

Nucleation of Diamond by Biased Hot Filament Chemical Vapor Deposition

本文利用扫描电子显微镜和原子力显微镜研究了Ｓｉ（１００）衬底上热灯丝金刚石膜成核过程。在－２４０Ｖ和２５０ｍＡ下，在镜面抛光的Ｓｉ（１００）衬底上金刚石最大成核密度超过了１０１０ｃｍ－２。研究表明，负衬底偏压增强成核主要是发射电子和离子轰击的结果。

The nucleation of diamond films on Si(100) in biased hot filament chemical vapor deposition has been investigated by scanning electron microscopy and atomic force microscopy.The maximum value of diamond nucleation density was to be over 10 10 cm -2 on mirror polished Si (100) at-240V and 250mA.The nucleation enhancement by the negative biased substrate is believed to be a result of the electron emission and ions bombardment.