摘要
本文利用扫描电子显微镜和原子力显微镜研究了Si(100)衬底上热灯丝金刚石膜成核过程。在-240V和250mA下,在镜面抛光的Si(100)衬底上金刚石最大成核密度超过了1010cm-2。研究表明,负衬底偏压增强成核主要是发射电子和离子轰击的结果。
The nucleation of diamond films on Si(100) in biased hot filament chemical vapor deposition has been investigated by scanning electron microscopy and atomic force microscopy.The maximum value of diamond nucleation density was to be over 10 10 cm -2 on mirror polished Si (100) at-240V and 250mA.The nucleation enhancement by the negative biased substrate is believed to be a result of the electron emission and ions bombardment.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
1999年第1期65-68,共4页
Journal of Synthetic Crystals
基金
国家自然科学基金
关键词
热灯丝CVD
金刚石薄膜
成电核子发射
hot filament chemical vapor deposition,diamond film,nucleation,electron emission