黄铜矿型CuInSe_2单晶光电材料研究评述

A Review on Growth Methods of Chalcopyrite CuInSe 2 Single Crystal

ＣｕⅢⅥ２族系列的黄铜矿型半导体化合物可用于光电装置，ＣｕＩｎＳｅ２是ⅠⅢⅥ２族的一个成员，其带隙能为１ｅＶ，光吸收系数较大，有希望成为潜在的太阳能材料。本文阐述了ＣｕＩｎＳｅ２晶体的光电性能及在作为太阳能材料方面的应用，对合成ＣｕＩｎＳｅ２单晶的各种生长方法进行了归纳和总结，并指出了研究中存在的问题和今后努力的方向。

The Cu Ⅲ Ⅵ 2 group of chalcopyrite semiconducting compounds continue to attract increasing interest due to their potential for optoelectronic device applications.CuInSe 2,a member of this group,has a direct band gap of about 1 eV and a large optical absorption coefficient.Because of these properties,it offers the possibility to be used in photovoltaic devices.Studies of growth and characterization of bulk CuInSe 2 crystals will be helpful for a better understanding of the properties of the crystals and will provide useful information for improvement of the thin film solar cells.In this paper the growth methods for large single crystal of CuInSe 2 are introduced and discussed.