钛掺杂对介孔硅材料结构性能的影响

Effect of Ti-Doping on the namework Structure of Mesoporous Silica

在室温碱性条件下合成了Ti掺杂的介孔硅材料MCM－41，借助XID3、IR、HREM和N2吸附等分析手段，探讨了Ti掺杂量对介孔材料结构和性能的影响．结果表明：掺杂的Ti离子可以进入Si骨架，并生成Si－O－Ti键．随着Ti掺杂量的增加，六方规则排列的介孔硅结构有序度下降，最终可导致结构一致性的破坏．

The Ti-doped mesoporous silica MCM-41 materials were synthesized under basic conditionat room temperature. The characteristics of samples were investigsted by using XRD, HREM, IR,and N2 adsorption techniques. The results show that Ti ions can get into the St frame work andlead to the vibration of St-O-Ti bond, with the increase of Ti ion addition, the mesoporous silicaframework structure can be disordered and finally deteriorated.