等离子体源离子渗氮合成硼碳氮薄膜的研究

B-C-N Films Synthesized by Plasma Source Ion Nitriding

采用等离子体源离子渗氮，即低能（1-3keV）、超大剂量（10^(19)～10^(20)ions．cm^(-2)）氮离子注入-同步热扩散技术，在300～500℃处理碳化硼薄膜，合成了硼碳氮三元薄膜．俄歇电子能谱和漫反射富氏变换红外光谱分析表明，合成的硼碳氮薄膜是碳硼比固定，氮含量可控的非晶态薄膜．300℃渗氮的薄膜由sp^2型的硼、碳、氮微区构成，而500℃渗氮的薄膜则由sp^3和sP^2型复合的微区组成．较高的渗氮工艺温度促进sP^3型结构的形成，渗氮工艺时间对薄膜结构的影响不显著．

An amorphous boron-carbon-nitrogen film was syathesized by plasma source ion nitriding,that is nitrogen ion implantation at low energy (1-3 keV) and superhigh dose (1019-1020ions. cm(-2)) and simultaneously indiffusion. Auger electron spectroscopy and diffuse reflectanceFourier transform infrared spectra showed that the films are mainly composed of sp2 and sp3 plain(graphite- and Pyridine-like) microdomains with a fixed B/C ratio and a controllable nitrogencontent at a nitriding temperature of 500℃ for a nitriding time from 2 to 6 h. The formation ofsp3 plain microdomains strongly depends on the nitriding temperature and softly on the nitridingtime.