基于肖特基接触IV分析法的有机半导体迁移率确定方法

Novel Mobility Evaluation of Organic Semiconductor Based on Current-Voltage Characteristics of Schottky Contact

载流子迁移率的测量对有机半导体材料及器件的研究极为重要。在总结目前有机半导体迁移率测量方法优缺点的基础之上,本文提出了一种测量有机半导体中载流子迁移率的新方法:用真空蒸镀法制作结构为"金属-有机半导体-金属"的肖特基接触有机半导体器件,通过选取适当的理论模型进行数值计算,然后用理论计算的结果对实验测得的该器件IV特性进行数值拟合,从而得到该有机半导体材料中载流子的迁移率,以及该材料的其他输运参数,如陷阱密度、陷阱特征深度等。本文利用这种方法测量了酞菁铜(CuPc)的空穴迁移率,并得到了CuPc的陷阱密度、陷阱特征深度等参数。

A novel technique was successfully developed to evaluate the mobility of a variety of organic semi-conductor materials and devices.In the technique,first,prototyped devices,consisting of metal-organic semiconductor-metal multi-layer with Schottky contact,were fabricated by vacuum deposition,then,its current-voltage characteristics were measured,and finally,the various physical quantities,including the carrier mobility,trap density,and trap distribution,were derived by means of data fitting and data comparison between the measured IV-characteristics and the simulated ones based on optimized models.The hole mobility,trap density and the characteristic trap distribution of copper phthalocyanine （CuPc） were measured in the newly-developed method.