厚膜工艺制备后栅极场发射显示板的研究

Thick Film Technology in Fabricating Under-Gate Field Emission Display Panel

讨论了包括丝网印刷、厚膜光刻、荧光粉沉积成膜、喷涂等厚膜工艺以及后栅极结构场致发射显示屏的制备工艺。研究了老炼工艺对阴极发射特性的改善。采用全厚膜工艺制备了2英寸后栅极场发射显示板样屏,在阳极距为1mm的后栅极结构中,阳极工作电压为2kV时,通过对样屏的测试分析,阴极开关范围差小于100V,达到了行列低压寻址驱动的要求,验证了全厚膜制备后栅极场发射显示板的可行性。

The paper addressed the application of the well-developed thick film technologies,such as screen printing,lithography,phosphor deposition,and spraying,to the fabrication of under-gate field emission display panel.The influence of aging process on improving the field emission characteristics of cathode was studied.A 2 inch under-gate field emission display panel with an anode distance of 1 mm was fabricated by the thick film technology to experimentally evaluate its characteristics and its performance.The cathode driving voltage was reduced to lower than 100V at an anode voltage of 2 kV,which enables the low voltage address driving.We suggest that the thick film technology should be feasible to fabricate the field emission panel.