摘要
介绍了目前可用于AlGaN半导体异质外延膜中Al组分含量测定的多种测试技术,包括高分辨X射线衍射技术、光致发光法、紫外-可见光透射光谱法、电子探针法、卢瑟福背散射法等,并对各种测试技术的原理和优缺点进行了概述。
The techniques for determination of Al composition in AlGaN epitaxial films were introuduced, which included high -resolution X - ray diffraction, photoluminescence, UV - visible transmittance spectroscopy, electron microprobe analysis and Rutherford backscattering. The principles of these texting techniques and the advantages and disadvantages were also summarized.
出处
《化学分析计量》
CAS
2010年第4期93-96,共4页
Chemical Analysis And Meterage
关键词
AlGaN外延膜
高分辨X射线衍射
光致发光
电子探针
卢瑟福背散射
AlGaN epilayer, high - resolution X - ray diffraction, photoluminescence, electron microprobe analysis, Rutherford backscattering