分析薄膜厚度与成分的卢瑟福背散射技术

Rutherford Backscattering Technique for Analysing the Thickness and Composition of Thin Films

对卢瑟福背散射分析技术的基本原理、试验设备、样品要求及数据处理方法进行了介绍,并举例分析了硅衬底上钛膜厚度的测定,以及钼衬底上钛钼合金膜的实际组分以及氦离子注入杂质的分布范围和实际剂量测定。讨论了卢瑟福背散射技术的发展和应用,介绍了弹性反冲、高能非卢瑟福散射和沟道技术三种分析方法。

The essential principle of Rutherford backscattering （RBS） analysis and the experimental apparatus, samples requests and data processing were presented. For illustration with applications of RBS, several experiments were carried out. The thickness of titanium film on silicon substrate was obtained. The composition of titanium-molybdenum alloy film on molybdenum substrate was determined. And the information of implanted helium ions as the impurity, such as the distribution range and actual dose in the alloy film was also achieved. As the development and application of RBS, three analysis methods including the elastic recoil, high energy non-Rutherford scattering and channeling techniques were discussed.