摘要
多晶硅在生长过程中,由于温度控制的不准确性,易导致硅芯/硅棒氧化而形成氧化夹层。针对以上问题,文章从热力学的角度揭示了氧化夹层形成的原因,提出了消除氧化夹层的具体措施。
The oxidation interlayer was formed due to temperature controlled improperly during polysilicon production. This paper was uncovered the reason of oxidation interlayer formation and the elimination measures of interlayer was brought forward.
出处
《东方汽轮机》
2010年第1期35-38,43,共5页
Dongfang Turbine
关键词
多晶硅
热力学
氧化夹层
polysilicon, thermo dynamical, oxidation interlayer
