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AlCu合金的反应离子刻蚀工艺研究

Study on the Reactive Ion Etching of AlCu Alloy
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摘要 AlCu合金的反应离子刻蚀具有其工艺特殊性,如Cu的去除、侧壁的保护、后腐蚀的抑制等。采用BCl3、Cl2、N2和CH4刻蚀AlCu合金,获得了优化的工艺参数,分析了CH4的侧壁保护作用,重点研究了刻蚀残留物的去除。 Reactive ion etching （RIE） of AlCualloy has special technical requirements on the process, such as the removal of Cu,the protection of sidewall and the prevention of mental corrosion after etching.AlCualloy was etched using BCI3, Cl2, N2 ＆ CH4 in this paper. Optimized process was abtained. The effect of CH4 on sidewall protection was analyzed. And the removal of residue was studied in the experiments.
作者 苟君 吴志明 太惠玲 袁凯
机构地区 电子科技大学电子薄膜与集成器件国家重点实验室
出处 《微处理机》 2010年第3期18-20,共3页 Microprocessors
关键词 AlCu合金 反应离子刻蚀 侧壁保护 残留物 AlCu alloy RIE Sidewall protection Residue
分类号 TN405 [电子电信—微电子学与固体电子学]
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微处理机
2010年 第3期

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