Al-Zr共掺杂ZnO透明导电薄膜制备及光电性能研究

Synthesis and optoelectrical properties of Al-Zr co-doped ZnO transparent conducting thin films

采用直流磁控溅射法,在室温水冷玻璃衬底上制备出Al-Zr共掺杂的ZnO透明导电薄膜。研究结果表明,Ar气压强对Al-Zr共掺杂ZnO透明导电薄膜的结构和电阻率有显著影响。X射线衍射(XRD)表明,Al-Zr共掺杂ZnO透明导电薄膜为六角纤锌矿结构的多晶薄膜,且具有C轴择优取向。扫描电镜(SEM)观察表明,Ar气压强对Al-Zr共掺杂ZnO透明导电薄膜的微观结构影响较大。薄膜的厚度随Ar气压强的增加而变薄,在Ar气压强为2.5Pa时,制备的Al-Zr共掺杂ZnO薄膜电阻率具有最小值1.01×10-3Ω.cm,在可见光区(500～800nm)平均透过率超过93%。

Transparent conducting Al-Zr co-doped ZnO thin films with high transparency and relatively low resistivity are successfully prepared by DC magnetron sputtering at room temperature.The experimental results show that argon pressure has a significant influence to the Al-Zr co-doped ZnO transparent conductive thin film structure and electrical resistivity.XRD studies reveal that all the films are polycrystalline with a hexagonal structure and a preferred orientation along the C-axis.SEM shows that argon pressure has a greater impact on Al-Zr co-doped ZnO transparent conductive thin film microstructure.The film thickness increases as the increase of argon pressure.The lowest resistivity achieves 1.01×10-3Ω·cm at a argon pressure of 2.5 Pa.All the films present a high transmittance above 93% in the visible range.