基于TMAH溶液的PN结自停止腐蚀的研究

Study of PN Junction Etch-Stop in an Improved TMAH Si-Etching Solution

MEMS器件的性能与尺寸密切相关。介绍了一种精确控制器件尺寸的各向异性腐蚀方法——基于改进TMAH溶液的PN结自停止腐蚀。这种方法几乎不刻蚀铝,从而与CMOS工艺良好地兼容。应用这种办法正面腐蚀,成功释放结构,尺寸与设计比较符合,证明了这种方法的可行性及易操作性。

The performance of MEMS（Micro-Electromechanical System） device is largely related to dimension.An PN junction etch-stop in an improved TMAH Si-etching solution is reported.The advantages of the process are the precision control of silicon dimension.Another important advantage is that no significant aluminum etching is observed during the process.The process is well CMOS compatible.It is believed that the process in this study is easy to handle,and is very useful for fabricating MEMS devices.