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采用噪声消除技术的3～5GHz CMOS超宽带LNA设计 被引量：2

Design of A CMOS UWB Low Noise Amplifier with Noise Canceling for 3～5 GHz UWB Systems
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摘要 设计了一种适用于超宽带无线通信系统接收前端的全集成低噪声放大器。该放大器以经典窄带共源共栅低噪声放大器为基础,通过加入并联负反馈电阻以扩展带宽,采用噪声消除技术优化噪声系数。低噪声放大器基于SMIC 0.18-μmRF CMOS工艺进行设计与仿真,仿真结果表明,在3-5 GHz的频带范围内,S11小于-13 dB,S22小于-11.8 dB,S21大于17.3dB,S12小于-32 dB,增益平坦度小于0.7 dB,最大噪声系数为2.9 dB,输入三阶截断点为-12.9 dBm。采用1.8 V电源供电,电路总功耗约为20.5 mW。 A fully integrated low noise amplifier（LNA） is presented,which is designed for an ultra-wideband（UWB） front-end.A resistive shunt-feedback is exploited to expand the frequency wideband,and meanwhile,a noise canceling technology is used to optimize the noise figure in the amplifier.The circuit simulation based on the SMIC 0.18-μm RF CMOS process is carried out.The results of the simulation show that,the S11 is less than-13 dB,S22 less than-11.8 dB,S21 more than 17.3 dB,and S12 less than-32 dB.There is a gain flatness of less than 0.7 dB,a maximum noise figure of 2.9 dB,and an input 3rd order intercept point of-12.9 dBm.The while circuit is with consumption of 20.5 mW under a 1.8 V single supply.
作者 段吉海 李晟 韩晓婷
机构地区 桂林电子科技大学信息与通信学院
出处 《电子器件》 CAS 2010年第3期290-294,共5页 Chinese Journal of Electron Devices
基金 广西科学基金资助"TU-UWB通信专用集成电路研究"(0575096)
关键词 噪声消除 超宽带 低噪声放大器 并联负反馈 noise canceling UWB low noise amplifier shunt-feedback
分类号 TN722.3 [电子电信—电路与系统]
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参考文献10

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同被引文献17

  • 1ZHANG H, CHEN G-C, LAI SM, et al. A high- gain differential CMOS LNA for 3.1-10.6 GHz ultra- wideband receivers [J]. IEICE Electronics Express, 2008, 5(15): 523-529.
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  • 3BLAAKMEER S C, KLUMPERINK E A M, LEENAERTS D M W, et al. Wideband Balun LNA with simultaneous output balancing, noise-canceling and distortion-canceling [J]. IEEE J Sol Sta Circ, 2008, 43(6): 1341-1350.
  • 4BLAAKMEER S C, KLUMPERINK E A M, LEENAERTS D M W, et al. A wideband noise canceling CMOS LNA exploiting a transformer [-C // IEEE RFIC Symp. San Francisco, CA, USA. 2006 137-140.
  • 5HUNG W-H, LIN K-T, Hsieh JY, GHz broadband CMOS low-noise et al. A 2-6 amplifier with current reuse topology utilizing a noise-shaping technique [C2 // IEEE Int Syrup Cire Syst. Rio de Janeiro, Brazil. 2011: 1291-1294.
  • 6LIANG C P, RAO P Z, HUANG T J, et al. Analysis and design of two low-power ultra-wideband CMOS low-noise amplifiers with out-band rejection [ J ]. IEEE Transactions on Microwave Theory & Techniques, 2010, 58 (2): 277-286.
  • 7CHOI K, MUKHERJEE T, PARAMESH J. A linearity- enhanced wideband low-noise amplifier [ C 1 // Procee- dings of IEEE Radio Frequency Integrated Circuits Sym- posium. Anaheim, CA, USA, 2010: 127-130.
  • 8KHURRAM M, REZAUL H S M. A 3-5GHz current- reuse go-boosted CG LNA fi)r uhrawideband in 130 nm CMOS [ J ]. IEEE Transactions on Very Large Scale In- tegration (VLSI)Systems, 2012, 20 (3): 400-409.
  • 9ALAVI-RAD H, ZIABAKHSH S, ZIABAKHSH S, et al. A 0.9V CMOS 3-5GHz broadband flat gain low- noise amplifier for ultra-wide band receivers [ J ]. Cana- dian Journal of Electrical and Computer Engineering, 2013, 36 (2): 87-91.
  • 10WANGC H, WANG Q Z. A 0.18m CMOS low noise amplifier using a current reuse technique for 3. 1 - 10. 6 GHz UWB receivers [J]. Chinese Journal of Semi- conductors, 2011, 32 (8): 085002-1-085002-6.

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电子器件
2010年 第3期

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