摘要
A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively.
A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively.
基金
Supported by the National Natural Science Foundation of China under Grant No 60736033.