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Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors

Characteristics in AlN/AlGaN/GaN Multilayer-Structured High-Electron-Mobility Transistors
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摘要 A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively. A new multilayer-structured AlN/AlCaN/CaN heterostructure high-electron-mobility transistor (HEMT) is demonstrated. The AIN/AlCaN/CaN HEMT exhibits the maximum drain current density of 800mA/mm and the maximum extrinsic transconductance of 170 mS/mm. Due to the increase of the distance between the gate and the two-dimensional electron-gas channel, the threshold voltage shifts slightly to the negative. The reduced drain current collapse and higher breakdown voltage are observed on this AIN/AlGaN/CaN HEMT. The current gain cut-off frequency and the maximum frequency of oscillation are 18.5 CHz and 29.0 GHz, respectively.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2010年第8期183-185,共3页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant No 60736033.
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