摘要
A higher sensitivity is achieved by making use of a high electron mobility transistor （HEMT） as the piezoresistive device. The temperature dependence on the electromechanical coupling effect of accelerometers is reported. The current in the structure of our study decreases at the rate of 3.15 mA/℃ with the temperature going up at every region, and piezoresistance coefficient decreases because of the shift of energy and expansion of lattice.
A higher sensitivity is achieved by making use of a high electron mobility transistor （HEMT） as the piezoresistive device. The temperature dependence on the electromechanical coupling effect of accelerometers is reported. The current in the structure of our study decreases at the rate of 3.15 mA/℃ with the temperature going up at every region, and piezoresistance coefficient decreases because of the shift of energy and expansion of lattice.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 50730009 and 50535030, and the National Basic Research Program of China under Grant No 2008CB317104.
