超临界GAS的工艺条件对CL-20粒度和晶型的影响

Influence of Supercritical Gas Anti-solvent Technological Conditions on Particle Size and Modes of Crystallization of CL-20

采用超临界气体抗溶剂(GAS)技术的半连续-静态工艺制备出平均粒径721.9nm的亚微米级ε型六硝基六氮杂异戊兹烷(CL-20),探讨了工艺条件对CL-20粒径和晶型的影响,测试了CL-20细化前后的冲击波感度和撞击感度。得到制备亚微米级ε型CL-20的最佳工艺条件为:压力平均升高速率4.0MPa/min,溶液初始浓度8g/100mL,系统压力10.5MPa,系统温度50℃。亚微米级ε型CL-20冲击波感度的隔板值降低58.6%,撞击感度的特性落高值提高84.1%。

The sub-micron ε-CL-20 with average particle size of 721.9nm was prepared by gas anti-solvent（GAS） technique.Some of the technical conditions affecting the particle size and modes of crystallization of CL-20 were studied.Small scale gap test and impact sensitivity of sub-micron CL-20 and its raw material were tested.Optimized parameters of preparing the sub-micron ε-CL-20 are obtained： average pressure increase velocity 4.0MPa/min,solution concentration 8.0g/100mL,system temperature 50℃ and system pressure 10.5MPa.It can be found that its gap thickness is decreased 58.6% and its characteristic droop height is higher 84.1% than that of its raw materials.