半导体量子阱中强耦合磁极化子的性质(英文)

Properties of strong-coupling magnetopolaron in a semiconductor quantum well

采用线性组合算符和幺正变换方法,研究了半导体量子阱中强耦合磁极化子的性质。推导出了无限深量子阱中强耦合磁极化子的振动频率、基态能量和自陷能随回旋共振频率及阱宽的变化关系。以RbCl量子阱进行数值计算,结果表明:当阱宽一定时,强耦合磁极化子振动频率、基态能量和自陷能随回旋共振频率的增大而增大;当回旋共振频率确定时,磁极化子振动频率和自陷能随阱宽的增加而增大,最后趋向于三维结果,而磁极化子的基态能量则随阱宽的增加而减小,且在阱宽取相对较小值时,表现出奇特的量子尺寸效应。

With linear combination operator and variational method, the properties of strong-coupling magnetopolaron in a semiconductor quantum well are studied. The relations between the vibration frequency, ground state energy and self-trapping energy of the strong-coupling magaetopolaron in an infinite quantum well with the well width or the cyclotron resonance frequency are derived. Numerical results of the RbCl quantum well show that the vibration frequency, ground state energy and self-trapping energy of the strong-coupling magnetopolaron increase with increasing the cyclotron resonance frequency when the well width is given. The vibration frequency and self-trapping energy increase with increasing the well width and finally approach to the three-dimensional （3D） value of the bulk material in a determinate cyclotron resonance frequency, but the ground state energy decreases with increasing the well width, and when the well width is small, the quantum size effect is significant.