低温烧结Al_2O_3-Bi_2O_3陶瓷基板的性能研究

The Substrate Properties of Al_2O_3-Bi_2O_3 Ceramic in Low-temperature Sintering

以Al2O3和Bi2O3为主要原料,添加微量烧结助剂,采用传统的陶瓷制备工艺制备片式熔断器基体材料。采用X射线衍射分析、扫描电镜(SEM)对材料进行了观察和性能测试。结果表明,随着烧结温度的升高和Bi2O3含量的增多,基体材料的致密度和收缩率均相应增大;相对介电常数随着温度的升高而增大,而介电损耗减小;当Al2O3质量分数为50%时,基体材料经950℃保温2h烧结后,ρ=3.87g/cm3,εr=33.92,tanδ=0.036,满足低介电损耗性能要求。

Chip fuse base material is prepared using traditional ceramic process with Al2O3 and Bi2O3 as mare raw materials, adding sintering additives. The material is analyzed by XRD, SEM and tested functionally. The results show that with the increase of sintering temperature and incensement of Bi2O3 content, the density and shrinkage of substrate materials increases accordingly. With the increase of temperature, the dielectric constant increases, while the dielectric loss decreases. When the AI2 03 quality score for 50 %, the performance of sample reaches ρ=3.87g/cm3,εr=33.92,tanδ=0.036, tang= 0. 036 after sintering at 950°, after keeping 2h, it reaches the performance requirements of low dielectric loss.