电子密度对等离子体光子晶体禁带特性的影响

Influence of electron density on the band gap structures of plasma photonic crystal

从Maxwell方程出发,采用类似于量子力学Kronig-Penney模型求解周期势的方法,结合双水电极介质阻挡放电的实验结果,研究了电子密度ne对一维等离子体光子晶体禁带特性的影响。研究发现:电子密度对等离子体光子晶体光子禁带的位置和宽度均有重要的影响;等离子体光子晶体的禁带宽度随电子密度的增加而增大,增长速率为电子密度的函数;等离子体光子晶体的截止频率、光子禁带边缘频率随电子密度的增大而增大。给出了当等离子体光子晶体具有显著禁带宽度时的电子密度的理论临界值。

The influence of the electron density ne on the band gap structures of one-dimensional plasma photonic crystals is studied on the basis of the experimental results in a dielectric barrier discharge with two water electrodes. The stationary Maxwell wave equation is solved by using a method analogous to Kronig-Penney＇s problem in quantum mechanics. Results show that the electron density affects greatly on both of the band gap widths and the band gap positions. The band gap width becomes larger with an increasing of the electron density,whose growth rate is related to the value of ne. The cut-off frequency as well as the band gap edge frequency are increased with ne. The critical electron density is given theoretically,with which the plasma photonic crystal has a remarkable band gap width.